IXYS IXGQ28N120B IGBT晶体管 28安培 1200伏 3.5 Rds

Width: 4.9 mm

Height: 20.3 mm

Length: 15.8 mm

Technology: Si

Unit Weight: 5.500 g

Configuration: Single

Mounting Style: Through Hole

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 50 A