IXYS IXGQ28N120B IGBT晶体管 28安培 1200伏 3.5 Rds
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ModelIXGQ28N120B
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Width: 4.9 mm
Height: 20.3 mm
Length: 15.8 mm
Technology: Si
Unit Weight: 5.500 g
Configuration: Single
Mounting Style: Through Hole
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 50 A
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