IXYS IXGR55N120A3H1 IGBT晶体管 高频范围 40kHz C-IGBT 带二极管
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ModelIXGR55N120A3H1
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Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 70 A
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