IXYS IXGT30N120B3D1 IGBT晶体管 30安培 1200伏

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Technology: Si

Unit Weight: 4.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 300 W

Continuous Collector Current: 50 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 3.5 V

Continuous Collector Current at 25 C: 30 A