IXYS IXGT64N60B3-TRL IGBT晶体管 IXGT64N60B3 TRL

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 460 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 64 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 400 A