IXYS IXGT72N60A3-TRL IGBT晶体管 IXGT72N60A3 TRL

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 540 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 400 A

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 75 A