IXYS IXGY2N120 IGBT晶体管 2安培 1200伏 3 Rds

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Continuous Collector Current: 5 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 5 A

Collector-Emitter Saturation Voltage: 3 V