IXYS IXTA160N10T7 MOSFET 160安培 100伏 6.9 Rds

Width: 9.4 mm

Height: 4.7 mm

Length: 10.2 mm

Fall Time: 42 ns

Rise Time: 61 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 430 W

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 49 ns

Id - Continuous Drain Current: 160 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V