IXYS IXTA1N170DHV MOSFETs TO263 1.7KV 1A N-CH DEPL

Fall Time: 216 ns

Rise Time: 38 ns

Technology: Si

Unit Weight: 2.500 g

Channel Mode: Depletion

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 47 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 290 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 46 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 570 mS

Rds On - Drain-Source Resistance: 16 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V