IXYS IXTA1R4N120P-TRL MOSFETs IXTA1R4N120P TRL

Fall Time: 29 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 24.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 86 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 78 ns

Id - Continuous Drain Current: 1.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.8 S

Rds On - Drain-Source Resistance: 13 Ohms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V