IXYS IXTA1R6N100D2HV MOSFETs TO263 1KV 1A N-CH DEPL

Fall Time: 41 ns

Rise Time: 65 ns

Technology: Si

Unit Weight: 2.500 g

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 34 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.65 S

Rds On - Drain-Source Resistance: 10 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V