IXYS IXTA230N04T4 MOSFETs 圆盘 MSFT N沟槽栅-第4代 TO-263D2

Fall Time: 82 ns

Rise Time: 143 ns

Technology: Si

Unit Weight: 2.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 140 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 340 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 85 ns

Id - Continuous Drain Current: 230 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 S

Rds On - Drain-Source Resistance: 2.9 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2 V