IXYS IXTH04N300P3HV MOSFETs TO247 3KV 0.4A N-CH 极性

Fall Time: 26 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 400 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 190 Ohms

Vds - Drain-Source Breakdown Voltage: 3 kV

Vgs th - Gate-Source Threshold Voltage: 2 V