IXYS IXTH200N085T MOSFET 200安培 85伏 5.0 Rds

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 64 ns

Rise Time: 80 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 480 W

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 mOhms

Vds - Drain-Source Breakdown Voltage: 85 V