IXYS IXTH3N150 MOSFET 高压功率 MOSFET

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 38.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.3 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V