IXYS IXTK32P60P PolarP 功率 MOSFET -32 安培 -600V 0.350 Rds

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Fall Time: 33 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 196 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 890 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 21 S

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V