IXYS IXTL2N470 高压 ISOPLUS 4.7KV 2A N-CH HIVOLT

Fall Time: 205 ns

Rise Time: 34 ns

Technology: Si

Unit Weight: 6.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 180 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 220 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 123 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 Ohms

Vds - Drain-Source Breakdown Voltage: 4.7 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V