IXYS IXTN120N25 MOSFET模块 120安培 250伏 0.02 Rds

Width: 25.25 mm

Height: 12.22 mm

Length: 31.88 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 120 A

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V