IXYS IXTN120P20T 沟槽 TrenchP 功率 MOSFET

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Vr - Reverse Voltage: 100 V

Pd - Power Dissipation: 830 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Id - Continuous Drain Current: 106 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V