IXYS IXTN32P60P 极性功率MOSFET -32安培 -600伏 0.350 Rds

Fall Time: 33 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Vr - Reverse Voltage: 100 V

Pd - Power Dissipation: 890 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V