IXYS IXTN400N20X4 MOSFET模块 200V 3毫欧 340A 超结X4级功率MOSFET，封装SOT-227B

Fall Time: 17 ns

Rise Time: 53 ns

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 830 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 114 ns

Id - Continuous Drain Current: 1.1 kA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V