Technology: Si
Unit Weight: 2 g
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Id - Continuous Drain Current: 15 A
Rds On - Drain-Source Resistance: 240 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
快速支持
直接联系认证专家
Technology: Si
Unit Weight: 2 g
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Id - Continuous Drain Current: 15 A
Rds On - Drain-Source Resistance: 240 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
直接联系认证专家