IXYS IXTP220N04T2 MOSFETs 220安培 40伏 0.0035 Rds

Width: 4.83 mm

Height: 9.15 mm

Length: 10.66 mm

Fall Time: 21 ns

Rise Time: 21 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 112 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 31 ns

Id - Continuous Drain Current: 220 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 3.5 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2 V