IXYS IXTP76N25TM 沟槽 TO220 250V 76A N-CH 沟槽

Fall Time: 29 ns

Rise Time: 25 ns

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 460 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 76 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 3 V