IXYS IXTQ18N60P MOSFETs 18.0 安培 600 伏 0.42 欧姆 Rds

Width: 4.9 mm

Height: 20.3 mm

Length: 15.8 mm

Fall Time: 22 ns

Rise Time: 22 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 62 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 420 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V