IXYS IXTQ86N20T MOSFETs 86安培 200伏 29 Rds

Fall Time: 29 ns

Rise Time: 24 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 90 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 480 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 52 ns

Id - Continuous Drain Current: 86 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 29 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 5 V