IXYS IXTR32P60P PolarP 功率 MOSFET -18 安培 -600V 0.385 Rds

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Fall Time: 33 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 196 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 310 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 21 S

Rds On - Drain-Source Resistance: 385 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V