IXYS IXTR90P20P PolarP 功率 MOSFET -90.0 安培 -200V 0.048 Rds

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Fall Time: 28 ns

Rise Time: 60 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 205 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 312 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 89 ns

Id - Continuous Drain Current: 53 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 30 S

Rds On - Drain-Source Resistance: 48 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V