IXYS IXTT11P50-TRL MOSFET模块 IXTT11P50 TRL

Fall Time: 34 ns

Rise Time: 32 ns

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: - 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 750 mOhms

Vds - Drain-Source Breakdown Voltage: - 500 V

Vgs th - Gate-Source Threshold Voltage: - 5 V