IXYS IXTT2N300P3HV 高压 TO268 3KV 30A N-CH 极性

Fall Time: 62 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 520 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 69 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 21 Ohms

Vds - Drain-Source Breakdown Voltage: 3 kV

Vgs th - Gate-Source Threshold Voltage: 3 V