IXYS IXTT6N120-TRL 高压 IXTT6N120 TRL

Fall Time: 18 ns

Rise Time: 33 ns

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.6 Ohms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V