IXYS IXTX1R4N450HV 高压 PLUS247 4.5KV 1.4A N-CH HIVOLT

Fall Time: 170 ns

Rise Time: 60 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 88 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 960 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 44 ns

Typical Turn-Off Delay Time: 126 ns

Id - Continuous Drain Current: 1.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.2 S

Rds On - Drain-Source Resistance: 40 Ohms

Vds - Drain-Source Breakdown Voltage: 4.5 kV

Vgs th - Gate-Source Threshold Voltage: 6 V