IXYS IXXH30N60B3D1 IGBT晶体管 XPT 600V IGBT GenX3 XPT IGBT

Width: 5.3 mm

Height: 21.45 mm

Length: 16.24 mm

Technology: Si

Unit Weight: 4.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 270 W

Operating Temperature Range: - 55 C to + 175 C

Continuous Collector Current: 60 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 115 A

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 60 A