IXYS IXXH30N60C3D1 IGBT晶体管 XPT 600V IGBT 30A

Technology: Si

Unit Weight: 6.400 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 270 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 60 A