IXYS IXXH30N60C3D1 IGBT晶体管 XPT 600V IGBT 30A
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ModelIXXH30N60C3D1
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Technology: Si
Unit Weight: 6.400 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 270 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 60 A
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