IXYS IXXH30N65B4 IGBT晶体管 650V/65A 沟槽IGBT GenX4 XPT

Technology: Si

Unit Weight: 4.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 70 A