IXYS IXXP50N60B3 IGBT晶体管 TO220 600V 50A IGBT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 600 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 200 A

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 120 A