IXYS IXYH24N170CV1 IGBT晶体管 TO247 1700V 24A 二极管
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ModelIXYH24N170CV1
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 500 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 4 V
Continuous Collector Current at 25 C: 58 A
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