IXYS IXYH40N120B4 IGBT晶体管 TO247 1200V 112A IGBT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 680 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 136 A

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 136 A