IXYS IXYN100N65A3 IGBT晶体管 SOT227 650V 100A GENX3
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ModelIXYN100N65A3
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Technology: Si
Unit Weight: 27 g
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 600 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 170 A
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