IXYS IXYN110N120B4H1 IGBT模块 IXYN110N120B4H1

Technology: Si

Configuration: Copack (Sonic-FRD)

Mounting Style: Screw Mount

Pd - Power Dissipation: 830 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.66 V

Continuous Collector Current at 25 C: 218 A