IXYS IXYN80N90C3H1 IGBT模块 900V 70A 2.7V XPT IGBTs GenX3 带二极管

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 500 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 115 A