IXYS IXYN82N120C3H1 IGBT晶体管 XPT IGBT C3级 1200V/105A；共封装

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 500 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 105 A

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 105 A