IXYS IXYP10N65C3D1M IGBT晶体管盘 IGBT XPT-GenX3 TO-220AB/FP

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 53 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 50 A

Collector-Emitter Saturation Voltage: 2.27 V

Continuous Collector Current at 25 C: 15 A