IXYS IXYP20N120C3 IGBT晶体管 GenX3 1200V XPT IGBT

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 278 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 40 A