IXYS IXYP50N65C3 IGBT晶体管 650V/130A XPT C3级 TO-220

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 600 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 130 A

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 132 A