IXYS IXYT20N120C3D1HV IGBT晶体管 TO268 1200V 17A 二极管

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 88 A

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 36 A