IXYS IXYT30N450HV IGBT晶体管 TO268 4500V 30A XPT

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 430 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Continuous Collector Current Ic Max: 200 A

Collector-Emitter Saturation Voltage: 3.9 V

Continuous Collector Current at 25 C: 60 A