IXYS IXYX110N120A4 IGBT晶体管 PLUS247 1200V 110A GENX4

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.36 kW

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 900 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 375 A