IXYS IXYX200N65B5 IGBT晶体管 650V, 200A, XPT Gen5 B5 IGBT in PLUS247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.61 kW

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 470 A

Collector-Emitter Saturation Voltage: 1.2 V

Continuous Collector Current at 25 C: 470 A