IXYS IXYX25N250CV1 IGBT晶体管 2500V/95A，高压XPT IGBT共封装

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 937 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.5 kV

Continuous Collector Current Ic Max: 95 A

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 95 A